Synthesis of Zn<sub>2</sub>NbN<sub>3</sub> ternary nitride semiconductor with wurtzite-derived crystal structure
نویسندگان
چکیده
Binary III-N nitride semiconductors with wurtzite crystal structure such as GaN and AlN have been long used in many practical applications ranging from optoelectronic to telecommunication. The structurally related ZnGeN2 or ZnSnN2 derived the parent binary compounds by cation mutation (elemental substitution) recently attracted attention, but ternary materials are mostly limited II-IV-N2 compositions. This paper reports on synthesis characterization of zinc niobium Zn2NbN3 - a previously unreported II2-V-N3 semiconductor. thin films synthesized using single-step adsorption-controlled growth, two-step deposition/annealing method that prevents loss Zn N. Measurements indicate crystalizes wurtzite-derived structure, contrast chemically rocksalt-derived Mg2NbN3 compound here for comparison method. estimated lattice parameters = 3.36A c 5.26A, (c/a 1.55), optical absorption onset is at 2.1 eV this cation-disordered Zn2NbN3. For comparison, published computational studies predict cation-ordered be semiconductor effective c/a 1.62 band gap 3.5 3.6 eV. Overall, work expands family semiconductors, suggests other nitrides should possible synthesize
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2021
ISSN: ['0953-8984', '1361-648X']
DOI: https://doi.org/10.1088/1361-648x/abfab3